Huntsville, Ala. – CFD Research has been awarded a NASA contract to continue development of high-voltage power electronics based on Gallium Oxide (Ga₂O₃), a new semiconductor technology with the potential to significantly improve the efficiency, reliability, and performance of future space power systems over the state-of-the-art.
As future NASA missions grow in complexity and sophistication of their power electronics applications, power management and distribution (PMAD) systems must evolve to offer higher performance and lower SWaP-C (size, weight, power, and cost). Gallium Oxide, an ultra-wide bandgap (UWBG) semiconductor, offers key inherent advantages over a traditional semiconductor like silicon, including higher temperature tolerance, greater breakdown voltage, improved switching frequency and power conversion efficiency. However, its tolerance to the extreme space environments, marked by intense radiation and extreme temperature changes, requires further testing, exploration, and refinement before the technology can be deployed by NASA.
“This work is a critical step toward enabling compact, efficient, and resilient power electronics for space applications,” said Dr. Partha Chakraborty, the project’s Principal Investigator. “By combining a complementary approach of experimental validation with advanced physics-based multi-scale modeling, we’re advancing a technology that could transform future space power system architectures.”
In a previous effort, the CFD Research team conducted irradiation testing of β-Ga₂O₃ based power MOSFETs and gathered essential performance data under simulated irradiation conditions. Advanced modeling revealed key insights into the fundamental physical mechanisms driving the irradiation-induced performance degradation and a peek into potential device-level optimization to mitigate the adverse radiation effects.
The current effort will expand on this foundation by conducting additional heavy-ion testing for radiation effects across various operating conditions. More detailed physics-based modeling and device response simulations will continue to guide design modifications for enhanced radiation tolerance. Promising solutions will be prototyped, tested, and delivered to NASA, along with a technology roadmap. Partnership with a commercial vendor of Ga₂O₃ technology will support prototyping and manufacturability to ensure scalability of the space-qualified devices.
“Our continued success in high-performance electronics reflects CFD Research’s commitment to innovation that supports national priorities in space and defense,” said Senior Director of Energy & Materials, Ashok Raman. “This effort strengthens our position at the forefront of next-generation power electronics solutions through focused research and strategic collaboration.”
About CFD Research
Since its inception in 1987, CFD Research has delivered innovative technology solutions within the Aerospace & Defense, Biomedical & Life Sciences, Intelligence & Sensing, and Energy & Materials industries. CFD Research has earned multiple national awards for successful application and commercialization of innovative component/system technology prototypes, multi-physics simulation software, multi-disciplinary analyses, and expert support services. Based in Huntsville, Alabama where laboratory facilities and headquarters are located, CFD Research also has office and laboratory facilities in Dayton, Ohio, prototyping test and evaluation facilities in Hollywood, Alabama, and office facilities in Fort Walton Beach, Florida. CFD Research is an ISO9001:AS9100D registered company and is appraised at CMMI Level II for Services. CFD Research is a 100% ESOP (employee-owned company) recognized in Inc. Magazine’s Inc5000 as a top growing company for four of last five years. Learn more at www.cfd-research.com.
